Effects of 7-MeV electron irradiation on photoluminescence from 1-eV GaInNAs-on-GaAs epilayers
Identifieur interne : 000E43 ( Main/Repository ); précédent : 000E42; suivant : 000E44Effects of 7-MeV electron irradiation on photoluminescence from 1-eV GaInNAs-on-GaAs epilayers
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Abstract
We have investigated the influence of 7-MeV electron irradiation (1.2 ×1015 and 1.8 × 1016 electrons/ cm-2 doses) and subsequent rapid thermal annealing (RTA) on luminescence efficiency of nearly lattice-matched 1-eV GaInNAs-on-GaAs thin epilayers, grown by molecular beam epitaxy. The study has been done by means of 9 K photoluminescence (PL) in conjunction with 300 K photo reflectance (PR) spectroscopy and x-ray diffraction (XRD) measurements. An enhancement in PL has been found for the lower dose whereas a drastic deterioration in PL has been seen for the higher dose. When rapid thermally annealed at 800 C for 1 min an enhancement in PL has been observed, noticeably for the sample irradiated at a higher dose, as compared to the reference non-irradiated sample. The irradiation-promoted enhancement in PL upon annealing has been accompanied by a small additional blue shift (BS) of the PL. This additional annealing-induced BS has been found, by PR and XRD, to be due to an irradiation-promoted enhancement in In-N bonds formation, whose magnitude appears to not depend on dose within the studied range.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Effects of 7-MeV electron irradiation on photoluminescence from 1-eV GaInNAs-on-GaAs epilayers</title><author><name sortKey="Pavelescu, E M" uniqKey="Pavelescu E">E.-M. Pavelescu</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Institute for Research and Development in Microtechnologies, Erou Iancu Nicolae 126A</s1><s2>077190 Bucharest</s2><s3>ROU</s3><sZ>1 aut.</sZ></inist:fA14><country>Roumanie</country><wicri:noRegion>077190 Bucharest</wicri:noRegion></affiliation></author><author><name sortKey="Kudrawiec, R" uniqKey="Kudrawiec R">R. Kudrawiec</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Physics, Wroclaw University of Technology Wybrze========zdot;e Wyspiańskiego 27</s1><s2>50-370 Wroclaw</s2><s3>POL</s3><sZ>2 aut.</sZ></inist:fA14><country>Pologne</country><wicri:noRegion>50-370 Wroclaw</wicri:noRegion></affiliation></author><author><name sortKey="Puustinen, J" uniqKey="Puustinen J">J. Puustinen</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692</s1><s2>33101 Tampere</s2><s3>FIN</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Finlande</country><wicri:noRegion>33101 Tampere</wicri:noRegion></affiliation></author><author><name sortKey="Tukiainen, A" uniqKey="Tukiainen A">A. Tukiainen</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692</s1><s2>33101 Tampere</s2><s3>FIN</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Finlande</country><wicri:noRegion>33101 Tampere</wicri:noRegion></affiliation></author><author><name sortKey="Guina, M" uniqKey="Guina M">M. Guina</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692</s1><s2>33101 Tampere</s2><s3>FIN</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Finlande</country><wicri:noRegion>33101 Tampere</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0137309</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0137309 INIST</idno><idno type="RBID">Pascal:13-0137309</idno><idno type="wicri:Area/Main/Corpus">001003</idno><idno type="wicri:Area/Main/Repository">000E43</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-2313</idno><title level="j" type="abbreviated">J. lumin.</title><title level="j" type="main">Journal of luminescence</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electron irradiation</term><term>Epitaxial layers</term><term>MeV range</term><term>Photoluminescence</term><term>Photoreflectance</term><term>Quaternary compounds</term><term>Radiation effects</term><term>Reflection spectrum</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Effet rayonnement</term><term>Irradiation électron</term><term>Photoluminescence</term><term>Photoréflectance</term><term>Spectre réflexion</term><term>Domaine énergie MeV</term><term>Couche épitaxique</term><term>Composé quaternaire</term><term>GaInNAs</term><term>Substrat GaAs</term><term>Arséniure nitrure de gallium indium</term><term>7855E</term><term>7820C</term><term>6180F</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We have investigated the influence of 7-MeV electron irradiation (1.2 ×10<sup>15</sup> and 1.8 × 10<sup>16</sup> electrons/ cm<sup>-2</sup> doses) and subsequent rapid thermal annealing (RTA) on luminescence efficiency of nearly lattice-matched 1-eV GaInNAs-on-GaAs thin epilayers, grown by molecular beam epitaxy. The study has been done by means of 9 K photoluminescence (PL) in conjunction with 300 K photo reflectance (PR) spectroscopy and x-ray diffraction (XRD) measurements. An enhancement in PL has been found for the lower dose whereas a drastic deterioration in PL has been seen for the higher dose. When rapid thermally annealed at 800 C for 1 min an enhancement in PL has been observed, noticeably for the sample irradiated at a higher dose, as compared to the reference non-irradiated sample. The irradiation-promoted enhancement in PL upon annealing has been accompanied by a small additional blue shift (BS) of the PL. This additional annealing-induced BS has been found, by PR and XRD, to be due to an irradiation-promoted enhancement in In-N bonds formation, whose magnitude appears to not depend on dose within the studied range.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-2313</s0></fA01><fA02 i1="01"><s0>JLUMA8</s0></fA02><fA03 i2="1"><s0>J. lumin.</s0></fA03><fA05><s2>136</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Effects of 7-MeV electron irradiation on photoluminescence from 1-eV GaInNAs-on-GaAs epilayers</s1></fA08><fA11 i1="01" i2="1"><s1>PAVELESCU (E.-M.)</s1></fA11><fA11 i1="02" i2="1"><s1>KUDRAWIEC (R.)</s1></fA11><fA11 i1="03" i2="1"><s1>PUUSTINEN (J.)</s1></fA11><fA11 i1="04" i2="1"><s1>TUKIAINEN (A.)</s1></fA11><fA11 i1="05" i2="1"><s1>GUINA (M.)</s1></fA11><fA14 i1="01"><s1>National Institute for Research and Development in Microtechnologies, Erou Iancu Nicolae 126A</s1><s2>077190 Bucharest</s2><s3>ROU</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Institute of Physics, Wroclaw University of Technology Wybrze========zdot;e Wyspiańskiego 27</s1><s2>50-370 Wroclaw</s2><s3>POL</s3><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692</s1><s2>33101 Tampere</s2><s3>FIN</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA20><s1>347-350</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>14666</s2><s5>354000506399710540</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>18 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0137309</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of luminescence</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>We have investigated the influence of 7-MeV electron irradiation (1.2 ×10<sup>15</sup> and 1.8 × 10<sup>16</sup> electrons/ cm<sup>-2</sup> doses) and subsequent rapid thermal annealing (RTA) on luminescence efficiency of nearly lattice-matched 1-eV GaInNAs-on-GaAs thin epilayers, grown by molecular beam epitaxy. The study has been done by means of 9 K photoluminescence (PL) in conjunction with 300 K photo reflectance (PR) spectroscopy and x-ray diffraction (XRD) measurements. An enhancement in PL has been found for the lower dose whereas a drastic deterioration in PL has been seen for the higher dose. When rapid thermally annealed at 800 C for 1 min an enhancement in PL has been observed, noticeably for the sample irradiated at a higher dose, as compared to the reference non-irradiated sample. The irradiation-promoted enhancement in PL upon annealing has been accompanied by a small additional blue shift (BS) of the PL. This additional annealing-induced BS has been found, by PR and XRD, to be due to an irradiation-promoted enhancement in In-N bonds formation, whose magnitude appears to not depend on dose within the studied range.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60A80F</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H55E</s0></fC02><fC02 i1="03" i2="3"><s0>001B70H20C</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Effet rayonnement</s0><s5>41</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Radiation effects</s0><s5>41</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Irradiation électron</s0><s5>42</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Electron irradiation</s0><s5>42</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Irradiación electrón</s0><s5>42</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Photoluminescence</s0><s5>43</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Photoluminescence</s0><s5>43</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Photoréflectance</s0><s5>44</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Photoreflectance</s0><s5>44</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Spectre réflexion</s0><s5>45</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Reflection spectrum</s0><s5>45</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Espectro reflexión</s0><s5>45</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Domaine énergie MeV</s0><s5>46</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>MeV range</s0><s5>46</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Couche épitaxique</s0><s5>61</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Epitaxial layers</s0><s5>61</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Composé quaternaire</s0><s5>62</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Quaternary compounds</s0><s5>62</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>GaInNAs</s0><s4>INC</s4><s5>83</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Substrat GaAs</s0><s4>INC</s4><s5>84</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Arséniure nitrure de gallium indium</s0><s4>INC</s4><s5>85</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>7855E</s0><s4>INC</s4><s5>86</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>7820C</s0><s4>INC</s4><s5>87</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>6180F</s0><s4>INC</s4><s5>88</s5></fC03><fN21><s1>112</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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